Combining Raman and photoluminescence measurements offers a comprehensive understanding of the optical properties of materials, enabling researchers to explore their structural, compositional, and electronic characteristics in a more holistic manner. This approach is particularly valuable in the investigation of 2-D materials, where precise knowledge of optical properties is crucial for various applications, including electronics, optoelectronics, and nanotechnology.
1. Thickness-dependent in-plane anisotropy of GaTe phonons
2. Layer thickness-dependent optical properties of GaTe
3. Size and shape control of CVD-grown monolayer MoS2
1. Nguyen The Hoang, Je-Ho Lee, Thi Hoa Vu, Sunglae Cho & Maeng-Je Seong, "Anisotropy Raman of Gallium Telluride", The 11th International Conference on Advanced Materials and Devices(ICAMD), Dec. 2019
2. Nguyen The Hoang, Je-Ho Lee, Thi Hoa Vu, Sunglae Cho & Maeng-Je Seong, "Thickness-dependent optical properties of GaTe", The 12th International Conference on Advanced Materials and Devices(ICAMD), Dec. 2021
3. Nguyen The Hoang, Je-Ho Lee, Thi Hoa Vu, Sunglae Cho & Maeng-Je Seong, "Optical spin polarization of GaTe", The 13th International Conference on Advanced Materials and Devices(ICAMD), Dec. 2023
1. Institute Scholarship-Integrated Master & Doctoral degree(CAYSS-Chung-Ang University Young Scientist Scholarship) Mar. 2018-Feb. 2024
2. Research of Scholarship for Academic Achievements(Chung-Ang University) 2021- Present
1. Prof. Dr. Maeng-Je Seong
Departement of Physics, Chung-Ang University
Email: mseong@cau.ac.kr
2. Prof. Dr. Dang Duc Dung
School of Engineering Physiscs, Hanoi University of Science and Technology
Email: dung.dangduc@hust.edu.vn